NC1M120C40GTNG
Part NoNC1M120C40GTNG
ManufacturerNextGen Components
DescriptionSiC MOSFET N 1200V 40mohm 76A 3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesNC1M
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C76A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)40mOhm @ 35A, 20V
RdsOn(Max)@Id2.8V @ 10mA
Vgs-
Vgs(th)(Max)@Id+20V, -5V
Vgs(Max)2534 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature375W (Ta)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-3L
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
22104
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 38.324 | |
| 10 | 37.5575 | |
| 100 | 36.4078 | |
| 1000 | 35.2581 | |
| 10000 | 33.7251 |
Associated Product
