PJD4NA65H_L2_00001
RoHS

PJD4NA65H_L2_00001

Part NoPJD4NA65H_L2_00001
ManufacturerPanjit
Description650V N-CHANNEL MOSFET
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ECAD Module PJD4NA65H_L2_00001
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Specification
PackageTape & Reel (TR)
Series-
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C3A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.75Ohm @ 1.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs16.1 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)423 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature34W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-252
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 8800
Pricing
QTY UNIT PRICE EXT PRICE
1 0.198
10 0.194
100 0.1881
1000 0.1822
10000 0.1742
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product