UF4SC120023B7S
Part NoUF4SC120023B7S
ManufacturerQorvo
Description1200V/23MO,SICFET,G4,TO263-7
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
Product StatusActive
FET TypeP-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)12V
Rds On (Max) @ Id, Vgs30mOhm @ 40A, 12V
Vgs(th) (Max) @ Id6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs37.8 nC @ 15 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1430 pF @ 800 V
FET FeatureDepletion Mode
Power Dissipation (Max)385W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK-7L
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Grade-
Qualification-
In Stock:
2776
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 19.262 | |
| 10 | 18.877 | |
| 100 | 18.3 | |
| 1000 | 17.72 | |
| 10000 | 16.95 |
Associated Product
