UFB25SC12E1BC3N
Part NoUFB25SC12E1BC3N
ManufacturerQorvo
Description1200V/25A,SIC,FULL-BRIDGE,G3,E1B
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
Product StatusActive
TechnologySiCFET (Silicon Carbide)
Configuration4 P-Channel (Full Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C36A (Tj)
Rds On (Max) @ Id, Vgs45mOhm @ 25A, 12V
Vgs(th) (Max) @ Id6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs42.5nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds1450pF @ 800V
Power - Max114W (Tc)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule
Operating Temperature-55°C ~ 150°C (TJ)
Grade-
Qualification-
In Stock:
2298
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 117.637 | |
| 10 | 115.284 | |
| 100 | 111.75 | |
| 1000 | 108.23 | |
| 10000 | 103.52 |
Associated Product
