Specification
MfrRenesas Electronics America Inc
Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25u00b0C48A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 24A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs32 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds1670 pF @ 10 V
FET Feature-
Power Dissipation (Max)1W (Ta), 29W (Tc)
Operating Temperature150u00b0C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (MP-3Z)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
In Stock:
5264
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 7.0 | |
| 10 | 6.86 | |
| 100 | 6.65 | |
| 1000 | 6.44 | |
| 10000 | 6.16 |
Associated Product
