NP80N04PDG-E1B-AY
Part NoNP80N04PDG-E1B-AY
ManufacturerRenesas Electronics Corporation
DescriptionMOSFET N-CH 40V 80A TO263-3
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs4.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds6900 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 115W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-3
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Grade-
Qualification-
In Stock:
1000
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.0 | |
| 10 | 1.96 | |
| 100 | 1.9 | |
| 1000 | 1.84 | |
| 10000 | 1.76 |
Associated Product
