RJK2006DPE-00#J3
Part NoRJK2006DPE-00#J3
ManufacturerRenesas
DescriptionMOSFET N-CH 200V 40A 4LDPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C40A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)59mOhm @ 20A, 10V
RdsOn(Max)@Id-
Vgs43 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1800 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature100W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeLDPAK
SupplierDevicePackageSC-83
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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3594
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Associated Product
