BSM120D12P2C005
Part NoBSM120D12P2C005
ManufacturerROHM
DescriptionMOSFET 2N-CH 1200V 120A MODULE
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
FETFeature-
DraintoSourceVoltage(Vdss)1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C120A (Tc)
RdsOn(Max)@Id-
Vgs2.7V @ 22mA
Vgs(th)(Max)@Id-
GateCharge(Qg)(Max)@Vgs14000pF @ 10V
InputCapacitance(Ciss)(Max)@Vds780W
Power-Max-40°C ~ 150°C (TJ)
OperatingTemperatureModule
MountingTypeModule
Package/Case-
SupplierDevicePackage-
Grade-
Qualification
In Stock:
1281
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 379.41 | |
| 10 | 371.8218 | |
| 100 | 360.4395 | |
| 1000 | 349.0572 | |
| 10000 | 333.8808 |
Associated Product
