BSM600C12P3G201
Part NoBSM600C12P3G201
ManufacturerROHM
DescriptionSICFET N-CH 1200V 600A MODULE
Datasheet
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ECAD Module
Specification
PackageTray
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C600A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)-
RdsOn(Max)@Id5.6V @ 182mA
Vgs-
Vgs(th)(Max)@Id+22V, -4V
Vgs(Max)28000 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2460W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeModule
SupplierDevicePackageModule
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3020
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1200.7584 | |
| 10 | 1176.7432 | |
| 100 | 1140.7205 | |
| 1000 | 1104.6977 | |
| 10000 | 1056.6674 |
Associated Product
