R6509ENXC7G
RoHS

R6509ENXC7G

Part NoR6509ENXC7G
ManufacturerROHM
Description650V 9A TO-220FM, LOW-NOISE POWE
Datasheet Download Now!
ECAD Module R6509ENXC7G
Get Quotation Now!
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C9A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)585mOhm @ 2.8A, 10V
RdsOn(Max)@Id4V @ 230µA
Vgs24 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)430 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature48W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220FM
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 4605
Pricing
QTY UNIT PRICE EXT PRICE
1 2.2512
10 2.2062
100 2.1386
1000 2.0711
10000 1.9811
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
NTMFS4H02NT1G
NTMFS4H02NT1G
onsemi
MOSFET N-CH 25V 37A/193A 5DFN
AUIRFR4104
AUIRFR4104
Infineon
MOSFET N-CH 40V 42A DPAK
FQP10N20C
FQP10N20C
onsemi
MOSFET N-CH 200V 9.5A TO220-3
IXFC80N10
IXFC80N10
IXYS
MOSFET N-CH 100V 80A ISOPLUS220
IXFR24N90Q
IXFR24N90Q
IXYS
MOSFET N-CH 900V ISOPLUS247
STP8NK100Z
STP8NK100Z
STMicroelectronics
MOSFET N-CH 1000V 6.5A TO220AB