R6520ENXC7G
Part NoR6520ENXC7G
ManufacturerRohm Semiconductor
Description650V 20A TO-220FM, LOW-NOISE POW
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn205mOhm @ 9.5A, 10V
MinRdsOn)4V @ 630µA
RdsOn(Max)@Id61 nC @ 10 V
Vgs±20V
Vgs(th)(Max)@Id1400 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds68W (Tc)
FETFeature150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-220FM
MountingTypeTO-220-3 Full Pack
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3986
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.626 | |
| 10 | 4.5335 | |
| 100 | 4.3947 | |
| 1000 | 4.2559 | |
| 10000 | 4.0709 |
Associated Product
