SCT2080KEGC11
Part NoSCT2080KEGC11
ManufacturerRohm Semiconductor
DescriptionMOSFET N-CH 1200V 40A TO247N
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C40A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)117mOhm @ 10A, 18V
RdsOn(Max)@Id4V @ 4.4mA
Vgs106 nC @ 18 V
Vgs(th)(Max)@Id+22V, -6V
Vgs(Max)2080 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature262W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247N
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3830
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 23.769 | |
| 10 | 23.2936 | |
| 100 | 22.5806 | |
| 1000 | 21.8675 | |
| 10000 | 20.9167 |
Associated Product
