SCT2160KEHRC11
Part NoSCT2160KEHRC11
ManufacturerROHM
Description1200V, 22A, THD, SILICON-CARBIDE
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C22A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)208mOhm @ 7A, 18V
RdsOn(Max)@Id4V @ 2.5mA
Vgs62 nC @ 18 V
Vgs(th)(Max)@Id+22V, -6V
Vgs(Max)1200 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature165W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureAutomotive
MountingTypeAEC-Q101
SupplierDevicePackageThrough Hole
Package/CaseTO-247N
GateCharge(Qg)(Max)@VgsTO-247-3
Grade
Qualification
In Stock:
2738
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 17.765 | |
| 10 | 17.4097 | |
| 100 | 16.8767 | |
| 1000 | 16.3438 | |
| 10000 | 15.6332 |
Associated Product
