SCT2H12NYTB
Part NoSCT2H12NYTB
ManufacturerROHM
DescriptionSICFET N-CH 1700V 4A TO268
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1700 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)1.5Ohm @ 1.1A, 18V
RdsOn(Max)@Id4V @ 410µA
Vgs14 nC @ 18 V
Vgs(th)(Max)@Id+22V, -6V
Vgs(Max)184 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature44W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-268
SupplierDevicePackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9668
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.2398 | |
| 10 | 5.135 | |
| 100 | 4.9778 | |
| 1000 | 4.8206 | |
| 10000 | 4.611 |
Associated Product
