SCT3080ALGC11
Part NoSCT3080ALGC11
ManufacturerROHM
DescriptionSICFET N-CH 650V 30A TO247N
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C30A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)104mOhm @ 10A, 18V
RdsOn(Max)@Id5.6V @ 5mA
Vgs48 nC @ 18 V
Vgs(th)(Max)@Id+22V, -4V
Vgs(Max)571 pF @ 500 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature134W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247N
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6112
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 12.0897 | |
| 10 | 11.8479 | |
| 100 | 11.4852 | |
| 1000 | 11.1225 | |
| 10000 | 10.6389 |
Associated Product
