BD709
Part NoBD709
ManufacturerSTMicroelectronics
DescriptionPower Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountThrough Hole
hFE Min40
PolarityNPN
Case/PackageTO-220-3
Number of Pins3
Radiation HardeningNo
Max Collector Current12 A
Max Power Dissipation75 W
Gain Bandwidth Product3 MHz
Max Operating Temperature150 °C
Min Operating Temperature-65 °C
Emitter Base Voltage (VEBO)5 V
Collector Base Voltage (VCBO)80 V
Collector Emitter Voltage (VCEO)80 V
In Stock:
7683
Pricing
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|---|---|---|
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Associated Product
BSP372L6327
INFINEON
Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON
Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
