SCT012H90G3AG
Part NoSCT012H90G3AG
ManufacturerSTMicroelectronics
DescriptionH2PAK-7
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs15.8mOhm @ 60A, 18V
Vgs(th) (Max) @ Id4.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs138 nC @ 18 V
Vgs (Max)+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds3880 pF @ 600 V
FET Feature-
Power Dissipation (Max)625W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
GradeAutomotive
QualificationAEC-Q101
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-7
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
In Stock:
2936
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 30.058 | |
| 10 | 29.456 | |
| 100 | 28.55 | |
| 1000 | 27.65 | |
| 10000 | 26.45 |
Associated Product
