SCT015W120G3-4AG
Part NoSCT015W120G3-4AG
ManufacturerSTMicroelectronics
DescriptionTO247-4
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C129A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs17.5mOhm @ 60A, 18V
Vgs(th) (Max) @ Id4.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs167 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3512 pF @ 800 V
FET Feature-
Power Dissipation (Max)673W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
GradeAutomotive
QualificationAEC-Q101
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4
In Stock:
2705
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 35.067 | |
| 10 | 34.366 | |
| 100 | 33.31 | |
| 1000 | 32.26 | |
| 10000 | 30.86 |
Associated Product
