SCT040H120G3AG
Part NoSCT040H120G3AG
ManufacturerSTMicroelectronics
DescriptionH2PAK-7
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs54mOhm @ 16A, 18V
Vgs(th) (Max) @ Id4.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs54 nC @ 18 V
Vgs (Max)+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds1329 pF @ 800 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-7
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GradeAutomotive
QualificationAEC-Q101
In Stock:
2016
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 11.418 | |
| 10 | 11.19 | |
| 100 | 10.85 | |
| 1000 | 10.5 | |
| 10000 | 10.05 |
Associated Product
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