SCT10N120AG
Part NoSCT10N120AG
ManufacturerSTMicroelectronics
DescriptionSICFET N-CH 1200V 12A HIP247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)690mOhm @ 6A, 20V
RdsOn(Max)@Id3.5V @ 250µA
Vgs22 nC @ 20 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)290 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature150W (Tc)
PowerDissipation(Max)-55°C ~ 200°C (TJ)
OperatingTemperatureAutomotive
MountingTypeAEC-Q101
SupplierDevicePackageThrough Hole
Package/CaseHiP247™
GateCharge(Qg)(Max)@VgsTO-247-3
Grade
Qualification
In Stock:
5219
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 13.008 | |
| 10 | 12.7478 | |
| 100 | 12.3576 | |
| 1000 | 11.9674 | |
| 10000 | 11.447 |
Associated Product
