SCT20N120
Part NoSCT20N120
ManufacturerSTMicroelectronics
DescriptionSICFET N-CH 1200V 20A HIP247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)290mOhm @ 10A, 20V
RdsOn(Max)@Id3.5V @ 1mA
Vgs45 nC @ 20 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)650 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature175W (Tc)
PowerDissipation(Max)-55°C ~ 200°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeHiP247™
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
15182
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 15.1156 | |
| 10 | 14.8133 | |
| 100 | 14.3598 | |
| 1000 | 13.9064 | |
| 10000 | 13.3017 |
Associated Product
