SCT30N120
Part NoSCT30N120
ManufacturerSTMicroelectronics
DescriptionSICFET N-CH 1200V 40A HIP247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C40A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)100mOhm @ 20A, 20V
RdsOn(Max)@Id2.6V @ 1mA (Typ)
Vgs105 nC @ 20 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)1700 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature270W (Tc)
PowerDissipation(Max)-55°C ~ 200°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeHiP247™
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
18080
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 20.2874 | |
| 10 | 19.8817 | |
| 100 | 19.273 | |
| 1000 | 18.6644 | |
| 10000 | 17.8529 |
Associated Product
