SCTH35N65G2V-7
RoHS

SCTH35N65G2V-7

Part NoSCTH35N65G2V-7
ManufacturerSTMicroelectronics
DescriptionSICFET N-CH 650V 45A H2PAK-7
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ECAD Module SCTH35N65G2V-7
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeSiCFET (Silicon Carbide)
Technology-
DraintoSourceVoltage(Vdss)N-Channel
Current-ContinuousDrain(Id)@25°C650 V
DriveVoltage(MaxRdsOn45A (Tc)
MinRdsOn)18V, 20V
RdsOn(Max)@Id67mOhm @ 20A, 20V
Vgs5V @ 1mA
Vgs(th)(Max)@Id73 nC @ 20 V
Vgs(Max)+22V, -10V
InputCapacitance(Ciss)(Max)@Vds1370 pF @ 400 V
FETFeature208W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CaseH2PAK-7
GateCharge(Qg)(Max)@VgsTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Grade
Qualification
In Stock: 7178
Pricing
QTY UNIT PRICE EXT PRICE
1 15.092
10 14.7902
100 14.3374
1000 13.8846
10000 13.281
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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