SCTW35N65G2VAG
Part NoSCTW35N65G2VAG
ManufacturerSTMicroelectronics
DescriptionSICFET N-CH 650V 45A HIP247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C45A (Tc)
DriveVoltage(MaxRdsOn18V, 20V
MinRdsOn)67mOhm @ 20A, 20V
RdsOn(Max)@Id5V @ 1mA
Vgs73 nC @ 20 V
Vgs(th)(Max)@Id+22V, -10V
Vgs(Max)1370 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature240W (Tc)
PowerDissipation(Max)-55°C ~ 200°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeHiP247™
SupplierDevicePackageTO-247-3
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock:
7440
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 18.128 | |
| 10 | 17.7654 | |
| 100 | 17.2216 | |
| 1000 | 16.6778 | |
| 10000 | 15.9526 |
Associated Product
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