SCTW40N120G2V
Part NoSCTW40N120G2V
ManufacturerSTMicroelectronics
DescriptionSILICON CARBIDE POWER MOSFET 120
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C36A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)100mOhm @ 20A, 18V
RdsOn(Max)@Id4.9V @ 1mA
Vgs61 nC @ 18 V
Vgs(th)(Max)@Id+22V, -10V
Vgs(Max)1233 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature278W (Tc)
PowerDissipation(Max)-55°C ~ 200°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeHiP247™
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9355
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 20.1663 | |
| 10 | 19.763 | |
| 100 | 19.158 | |
| 1000 | 18.553 | |
| 10000 | 17.7463 |
Associated Product
