SCTW60N120G2
Part NoSCTW60N120G2
ManufacturerSTMicroelectronics
DescriptionDISCRETE
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)52mOhm @ 30A, 18V
RdsOn(Max)@Id5V @ 1mA
Vgs94 nC @ 8 V
Vgs(th)(Max)@Id+18V, -5V
Vgs(Max)1969 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature389W (Tc)
PowerDissipation(Max)-55°C ~ 200°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeHiP247™
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4710
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 24.9526 | |
| 10 | 24.4535 | |
| 100 | 23.705 | |
| 1000 | 22.9564 | |
| 10000 | 21.9583 |
Associated Product
