SCTW90N65G2V
Part NoSCTW90N65G2V
ManufacturerSTMicroelectronics
DescriptionSICFET N-CH 650V 90A HIP247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C90A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)25mOhm @ 50A, 18V
RdsOn(Max)@Id5V @ 250µA
Vgs157 nC @ 18 V
Vgs(th)(Max)@Id+22V, -10V
Vgs(Max)3300 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature390W (Tc)
PowerDissipation(Max)-55°C ~ 200°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeHiP247™
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
15301
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 31.77 | |
| 10 | 31.1346 | |
| 100 | 30.1815 | |
| 1000 | 29.2284 | |
| 10000 | 27.9576 |
Associated Product
