SCTWA30N120
Part NoSCTWA30N120
ManufacturerSTMicroelectronics
DescriptionIC POWER MOSFET 1200V HIP247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C45A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)100mOhm @ 20A, 20V
RdsOn(Max)@Id3.5V @ 1mA (Typ)
Vgs105 nC @ 20 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)1700 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature270W (Tc)
PowerDissipation(Max)-55°C ~ 200°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeHiP247™ Long Leads
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14710
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 24.152 | |
| 10 | 23.669 | |
| 100 | 22.9444 | |
| 1000 | 22.2198 | |
| 10000 | 21.2538 |
Associated Product
