SCTWA35N65G2V
Part NoSCTWA35N65G2V
ManufacturerSTMicroelectronics
DescriptionTRANS SJT N-CH 650V 45A TO247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C45A (Tc)
DriveVoltage(MaxRdsOn18V, 20V
MinRdsOn)72mOhm @ 20A, 20V
RdsOn(Max)@Id3.2V @ 1mA
Vgs73 nC @ 20 V
Vgs(th)(Max)@Id+20V, -5V
Vgs(Max)73000 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature208W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247 Long Leads
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7297
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 15.6338 | |
| 10 | 15.3211 | |
| 100 | 14.8521 | |
| 1000 | 14.3831 | |
| 10000 | 13.7577 |
Associated Product
