STB10N65K3
Part NoSTB10N65K3
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 10A D2PAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesSuperMESH3™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1Ohm @ 3.6A, 10V
RdsOn(Max)@Id4.5V @ 100µA
Vgs42 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1180 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature150W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CaseTO-263 (D2PAK)
GateCharge(Qg)(Max)@VgsTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Grade
Qualification
In Stock:
18450
Pricing
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Associated Product
