STB12N60DM2AG
Part NoSTB12N60DM2AG
ManufacturerSTMicroelectronics
DescriptionDISCRETE
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)430mOhm @ 5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs14.5 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)614 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock:
3625
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0836 | |
| 10 | 1.0619 | |
| 100 | 1.0294 | |
| 1000 | 0.9969 | |
| 10000 | 0.9536 |
Associated Product
