STB20NM60-1
Part NoSTB20NM60-1
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 600V 20A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)290mOhm @ 10A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs54 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature192W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI2PAK
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
10736
Pricing
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Associated Product
