STB21NM50N-1
Part NoSTB21NM50N-1
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 500V 18A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™ II
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)190mOhm @ 9A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs65 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)1950 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature140W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI2PAK
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
13942
Pricing
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Associated Product
