STB6N65M2
Part NoSTB6N65M2
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 4A D2PAK
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesMDmesh™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.35Ohm @ 2A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs9.8 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)226 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature60W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
19064
Pricing
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