STD3NM60-1
Part NoSTD3NM60-1
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 600V 3A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.5Ohm @ 1.5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs14 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)324 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature42W (Tc)
PowerDissipation(Max)-65°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI-PAK
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
11983
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Associated Product
