STD6N65M2
RoHS

STD6N65M2

Part NoSTD6N65M2
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 4A DPAK
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ECAD Module STD6N65M2
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesMDmesh™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.35Ohm @ 2A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs9.8 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)226 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature60W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeDPAK
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 19446
Pricing
QTY UNIT PRICE EXT PRICE
1 1.36
10 1.3328
100 1.292
1000 1.2512
10000 1.1968
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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