STD6N65M2
Part NoSTD6N65M2
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 4A DPAK
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesMDmesh™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.35Ohm @ 2A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs9.8 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)226 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature60W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeDPAK
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
19446
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 1.36 | |
10 | 1.3328 | |
100 | 1.292 | |
1000 | 1.2512 | |
10000 | 1.1968 |