STFI10N65K3
Part NoSTFI10N65K3
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 10A I2PAKFP
Datasheet
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ECAD Module
Specification
PackageTube
SeriesSuperMESH3™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1Ohm @ 3.6A, 10V
RdsOn(Max)@Id4.5V @ 100µA
Vgs42 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds35W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-281 (I2PAKFP)
MountingTypeTO-262-3 Full Pack, I2PAK
SupplierDevicePackage1180 pF @ 25 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8124
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.2657 | |
| 10 | 3.2004 | |
| 100 | 3.1024 | |
| 1000 | 3.0044 | |
| 10000 | 2.8738 |
Associated Product
