STI11NM80
Part NoSTI11NM80
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 800V 11A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C11A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)400mOhm @ 5.5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs43.6 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1630 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature150W (Tc)
PowerDissipation(Max)-65°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI2PAK (TO-262)
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5513
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Associated Product
