STI13NM60N
Part NoSTI13NM60N
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 600V 11A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™ II
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C11A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)360mOhm @ 5.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs30 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)790 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature90W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI2PAK
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
19571
Pricing
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Associated Product
