STI18N65M2
Part NoSTI18N65M2
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 12A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™ M2
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)330mOhm @ 6A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs20 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)770 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature110W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseI2PAK
GateCharge(Qg)(Max)@VgsTO-262-3 Long Leads, I2PAK, TO-262AA
Grade
Qualification
In Stock:
18094
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.6068 | |
| 10 | 2.5547 | |
| 100 | 2.4765 | |
| 1000 | 2.3983 | |
| 10000 | 2.294 |
Associated Product
