STI200N6F3
Part NoSTI200N6F3
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 60V 120A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesSTripFET™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C120A (Tc)
DriveVoltage(MaxRdsOn3.8mOhm @ 60A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id101 nC @ 10 V
Vgs6265 pF @ 25 V
Vgs(th)(Max)@Id-
Vgs(Max)330W (Tc)
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 175°C (TJ)
FETFeatureThrough Hole
PowerDissipation(Max)TO-262 (I2PAK)
OperatingTemperatureTO-262-3 Long Leads, I2PAK, TO-262AA
MountingType10V
SupplierDevicePackage±20V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
4949
Pricing
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Associated Product
