STI30NM60N
Part NoSTI30NM60N
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 600V 25A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™ II
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C25A (Tc)
DriveVoltage(MaxRdsOn130mOhm @ 12.5A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id91 nC @ 10 V
Vgs2700 pF @ 50 V
Vgs(th)(Max)@Id-
Vgs(Max)190W (Tc)
InputCapacitance(Ciss)(Max)@Vds150°C (TJ)
FETFeatureThrough Hole
PowerDissipation(Max)TO-262 (I2PAK)
OperatingTemperatureTO-262-3 Long Leads, I2PAK, TO-262AA
MountingType10V
SupplierDevicePackage±30V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
5721
Pricing
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Associated Product
