STI40N65M2
Part NoSTI40N65M2
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 32A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™ M2
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C32A (Tc)
DriveVoltage(MaxRdsOn99mOhm @ 16A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id56.5 nC @ 10 V
Vgs±25V
Vgs(th)(Max)@Id2355 pF @ 100 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds250W (Tc)
FETFeature150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureI2PAK
MountingTypeTO-262-3 Long Leads, I2PAK, TO-262AA
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
13310
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.5802 | |
| 10 | 3.5086 | |
| 100 | 3.4012 | |
| 1000 | 3.2938 | |
| 10000 | 3.1506 |
Associated Product
