STI8N65M5
Part NoSTI8N65M5
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 7A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™ V
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C7A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)600mOhm @ 3.5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs15 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)690 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature70W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI2PAK
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6820
Pricing
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Associated Product
