STP10NM60N
Part NoSTP10NM60N
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 600V 10A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™ II
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)550mOhm @ 4A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs19 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)540 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature70W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
22465
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.869 | |
| 10 | 2.8116 | |
| 100 | 2.7255 | |
| 1000 | 2.6395 | |
| 10000 | 2.5247 |
Associated Product
