STU16N65M2
Part NoSTU16N65M2
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 11A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™ M2
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C11A (Tc)
DriveVoltage(MaxRdsOn360mOhm @ 5.5A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id19.5 nC @ 10 V
Vgs±25V
Vgs(th)(Max)@Id718 pF @ 100 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds110W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeThrough Hole
SupplierDevicePackageTO-251 (IPAK)
Package/CaseTO-251-3 Short Leads, IPak, TO-251AA
GateCharge(Qg)(Max)@Vgs10V
Grade
Qualification
In Stock:
14906
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.9662 | |
| 10 | 1.9269 | |
| 100 | 1.8679 | |
| 1000 | 1.8089 | |
| 10000 | 1.7303 |
Associated Product
