STU7N65M2
Part NoSTU7N65M2
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 5A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.15Ohm @ 2.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs9 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)270 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature60W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251 (IPAK)
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
15578
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.6905 | |
| 10 | 1.6567 | |
| 100 | 1.606 | |
| 1000 | 1.5553 | |
| 10000 | 1.4876 |
Associated Product
