STU9HN65M2
Part NoSTU9HN65M2
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 5.5A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™ M2
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C5.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)820mOhm @ 2.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs11.5 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)325 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature60W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251 (IPAK)
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17035
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.2402 | |
| 10 | 1.2154 | |
| 100 | 1.1782 | |
| 1000 | 1.141 | |
| 10000 | 1.0914 |
Associated Product
