STW58N65DM2AG
Part NoSTW58N65DM2AG
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 650V 48A TO247
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™ DM2
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C48A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)65mOhm @ 24A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs88 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)4100 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature360W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-3
SupplierDevicePackageTO-247-3
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock:
19131
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 8.215 | |
| 10 | 8.0507 | |
| 100 | 7.8042 | |
| 1000 | 7.5578 | |
| 10000 | 7.2292 |
Associated Product
