STWA65N023M9
Part NoSTWA65N023M9
ManufacturerSTMicroelectronics
DescriptionN-CHANNEL 650 V, 19.9 MOHM TYP.,
Datasheet
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ECAD Module
Specification
Package1
SeriesTube
ProductStatus-
FETTypeActive
TechnologyN-Channel
DraintoSourceVoltage(Vdss)MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C650 V
DriveVoltage(MaxRdsOn95A (Tc)
MinRdsOn)10V
RdsOn(Max)@Id23mOhm @ 48A, 10V
Vgs4.2V @ 250µA
Vgs(th)(Max)@Id230 nC @ 10 V
Vgs(Max)±30V
InputCapacitance(Ciss)(Max)@Vds8844 pF @ 400 V
FETFeature-
PowerDissipation(Max)463W (Tc)
OperatingTemperature-55°C ~ 150°C (TJ)
MountingTypeThrough Hole
SupplierDevicePackageTO-247 Long Leads
Package/CaseTO-247-3
GateCharge(Qg)(Max)@Vgs-
Grade-
Qualification
In Stock:
3776
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 31.32 | |
| 10 | 30.6936 | |
| 100 | 29.754 | |
| 1000 | 28.8144 | |
| 10000 | 27.5616 |
Associated Product
